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상세설명 | 제조사 |
HEXFET Power MOSFET
PD -95958
IRFH5007PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
75 5.9 65 1.2 100
V mΩ nC Ω A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C)
h
Applications
Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters
Benefits
Features and Benefits
Features
Low RDSon (≤ 5.9mΩ) Low Thermal Resistance to PCB (≤ 0.5°C, W) 100% Rg tested Low Profile (≤ 0.9 mm) results in Industry-Standard Pinout ⇒ C
| ![]() International Rectifier |