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상세설명 | 제조사 |
Automotive MOSFET
PD - 95513A
AUTOMOTIVE MOSFET
IRFR3710ZPbF IRFU3710ZPbF
HEXFET® Power MOSFET
D
Features
l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 100V
G S
RDS(on) = 18mΩ ID = 42A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea
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