IRL630 PDF 데이터시트 검색

Previous Datasheet Index Next Data Sheet PD -9.1255 IRL630 HEXFET ® Power MOSFET Dynamic dv, dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred