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상세설명 | 제조사 |
High speed IGBT
VCES Low VCE(sat) High speed IGBT IXGH, IXGM 25 N100 1000 V IXGH, IXGM 25 N100A 1000 V
I C25 50 A 50 A
VCE(sat) 3.5 V 4.0 V
Symbol
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TVJ = 125° C, RG = 33 Ω Clamped inductive load, L = 100 H T C = 25°C
Maximum Ratings 1000 1000 ±20 ±30 50 25 100 ICM = 50 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C
TO-247 AD
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