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상세설명 | 제조사 |
MOS FIELD EFFECT POWER TRANSISTORS
DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ132, 2SJ132-Z
P-CHANNEL POWER MOS FET FOR SWITCHING
FEATURES Gate drive available at logic level (VGS = 4 V) High current control available in small
dimension due to low RDS(on) ( 0.25 Ω) 2SJ132-Z is a lead process product and is deal
for mounting a hybrid IC.
QUALITY GRADES Standard
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality gra
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