![]() |
상세설명 | 제조사 |
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DC COMPONENTS CO., LTD.
R
J882
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 10W audio amplifier, voltage regulator, DC-DC converter, and relay driver.
TO-252(DPAK)
Pinning
1 = Base 2 = Collector 3 = Emitter
.268(6.80) .252(6.40) o .217(5.50) .205(5.20) .063(1.60) .055(1.40) .077(1.95) .065(1.65) .022(0.55) .018(0.45)
Absolute Maximum Ratings(TA=25
Characteristic Collector-Base Voltage Collector-Emitte
| ![]() Dc Components |