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상세설명 | 제조사 |
(JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR
TECHNICAL DATA
PNP LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500, 485 Devices 2N5415 2N5415S 2N5416 2N5416S Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C @ TC = +250C Operating & Storage Temperature Range
Symbol
VCEO VCBO VEBO IC PT Top, Tstg
2N5415
200 200
2N5416
300 350
Units
Vdc Vdc Vdc Adc W W 0 C Unit C, W
6.0 1.0 0.75 10 -65 to +200 Max. 1
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