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K10A60W PDF 데이터시트 검색

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TK10A60W

Preliminary TK10A60W TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK10A60W Switching Regulator Applications Low drain-source on-resistance : RDS (ON) = 0.327 by used to Super Junction Structure : DTMOS (typ.) Easy to control Gate switching Enhancement-mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3.2 ± 0.2 10 ± 0.3 A Unit: mm 2.7 ± 0.2 3.9 3.0 15.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.14 ± 0.15 2.8 MAX. 13 ± 0.5 2.6 ± 0.1 4.5 ± 0.2
Toshiba Semiconductor
Toshiba Semiconductor

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