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상세설명 | 제조사 |
TK10A60W
Preliminary
TK10A60W
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS )
TK10A60W
Switching Regulator Applications
Low drain-source on-resistance : RDS (ON) = 0.327 by used to Super Junction Structure : DTMOS
(typ.)
Easy to control Gate switching
Enhancement-mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)
3.2 ± 0.2 10 ± 0.3
A
Unit: mm
2.7 ± 0.2
3.9 3.0 15.0 ± 0.3
Absolute Maximum Ratings (Ta = 25°C)
1.14 ± 0.15
2.8 MAX. 13 ± 0.5
2.6 ± 0.1 4.5 ± 0.2
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