K1365 PDF 데이터시트 검색

2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSII.5) 2SK1365 Switching Power Supply Applications - Low drain source ON resistance : RDS (ON) = 1.5 Ω (typ.) - High forward transfer admittance : |Yfs| = 4.0 S (typ.) - Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) - Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain source voltage Drain gate voltage (RG