![]() |
상세설명 | 제조사 |
High Gain Power Transistor
KSD1944
KSD1944
High Gain Power Transistor
1
TO-220F 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (TC=25°C) Junction Temperature Storage Temperature Value 80 60 8 3 30 150 - 55 ~ 150 Units V V V A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
S
| ![]() Fairchild Semiconductor |