KSD526 PDF 데이터시트 검색

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD526 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃ ·Complement to Type KSB596 APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 20~25W high fidelity audio frequency amplifier output stage applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Co