KU056N03Q PDF 데이터시트 검색

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC, DC Converter and Battery pack. D P KU056N03Q N-Ch Trench MOSFET H T G L FEATURES VDSS=30V, ID=17A. Drain to Source On Resistance. RDS(ON)=5.6m (Max.) @ VGS=10V RDS(ON)=9.7m (Max.) @ VGS=4.5V 8 5 B1 B2 1 4 A MOSFET Maximum Ratings (Ta=25 CHARACTERISTIC Drain to