LE28F4001C PDF 데이터시트 검색

Preliminary Specifications CMOS LSI LE28F4001CTS-12 4M-Bit (512k × 8) Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active Current(Read): 25 mA (Max.) Standby Current: 20 A (Max.) High Read, Write Reliability Sector-write Endurance Cycles: 104 10 Years Data Retention Latched Address and Data Self-timed Erase and Programming Byte Programming: 40 s (Max.) En