LPD200MX PDF 데이터시트 검색

PRELIMINARY DATA SHEET PACKAGED HIGH DYNAMIC RANGE PHEMT FEATURES 1.0 dB Noise Figure at 1.8 GH- 15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GH- 19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GH- 31 dBm IP3 at 1.8 GH- 60% Power-Added-Efficiency LPD200MX DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide , Indium Gallium Arsenide (AlGaAs, InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Sch