M02N60 PDF 데이터시트 검색

N Channel MOSFET 2.0A M02N60 PIN CONFIGURATION TO-251 TO-252 FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature 1.Gate 2.Drain 3.Source ABSOLUTE MAXIMUM RATINGS RATING Drain to Current - Continuous - Pulsed Gate-to-Source Voltage Continue - Non-repetitive Total Power Dissipation TO-251, 252 TO