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상세설명 | 제조사 |
8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 5V Supply Flash Memory
M29F800DT M29F800DB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory
FEATURES SUMMARY s SUPPLY VOLTAGE
s s
Figure 1. Packages
VCC = 5V ±10% for Program, Erase and Read ACCESS TIME: 55, 70, 90ns PROGRAMMING TIME 10 s per Byte, Word typical 19 MEMORY BLOCKS 1 Boot Block (Top or Bottom Location) 2 Parameter and 16 Main Blocks
SO44 (M)
s
s
PROGRAM, ERASE CONTROLLER Embedded Byte, Word Program algorithms ERASE SUSPEND and RESUME MODES Read and Program another Block during E
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