M58WR032EB PDF 데이터시트 검색

M58WR032ET M58WR032EB 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE VDD = 1.65V to 2.2V for Program, Erase and Read VDDQ = 1.65V to 3.3V for I, O Buffers VPP = 12V for fast Program (optional) SYNCHRONOUS , ASYNCHRONOUS READ Synchronous Burst Read mode: 54MH- Asynchronous, Synchronous Page Read mode Random Access: 70, 80, 100ns PROGRAMMING TIME 8 s by Word typical for Fast Factory Program Do