MA2Q735 PDF 데이터시트 검색

Schottky Barrier Diodes (SBD) MA2Q735 Silicon epitaxial planar type Unit : mm For switching circuits 4.4 ± 0.3 0 to 0.05 I Features Forward current (average) IF(AV): 1 A type Reverse voltage (DC value) VR: 30 V Allowing automatic insertion with the emboss taping 2.5 ± 0.3 2 1 0.25 0.05 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Non-repetitive peak forward surge current*2 Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM