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상세설명 | 제조사 |
Silicon epitaxial planar type
Schottky Barrier Diodes (SBD)
MA3J741
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.425
2.1 ± 0.1 1.25 ± 0.1 0.425
+ 0.1
2.0 ± 0.2 1.3 ± 0.1 0.65 0.65
1 3 2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature Symbol VR VRM IF IFM Tj Tstg Rating 30 30 30 150 125 55 to +125 Unit V V mA mA °C °C
0.9 ± 0.1
1 : Anode 2 : NC 3 : Cathode EIAJ : SC-7
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