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상세설명 | 제조사 |
Silicon epitaxial planar type
Schottky Barrier Diodes (SBD)
MA3X701
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
0.65 ± 0.15
2.8 0.3 1.5 0.05
+ 0.25
+ 0.2
0.65 ± 0.15
0.95
2
I Absolute Maximum Ratings Ta = 25°C
Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature VR VRRM IF(AV) IFSM Tj Tstg 30 30 700 5 125 55 to +150 V V mA A °C °C
1.1 0.1
+ 0.2
Parameter
Symbol
Rating
U
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