MA4AGSW8-2 PDF 데이터시트 검색

AlGaAs SP8T PIN Diode Switch V 1.00 MA4AGSW8-2 Features n n n n n n MA4AGSW8-2 Layout Specified Performance : 50 MH- to 40 GH- Operational performance: 50 MH- to 50 GH- 2.0 dB Typical Insertion Loss at 40 GH- 30 dB Typical Isolation at 40 GH- thru 3 Diodes 22 dB Typical Isolation at 40 GH- thru 2 Diodes Low Current comsumption : 10 m A for low loss state 0 Volts for Isolation state n M, A-COM’s unique patent pending AlGaAs hetero-junction anode technology n Silicon Nitride Passivation n