MMFT2955E PDF 데이터시트 검색

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2955E, D Medium Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS E FETt SOT 223 for Surface Mount This advanced E FET is a TMOS medium power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converter