NCE3050I PDF 데이터시트 검색

http:, , www.ncepower.com Pb Free Product NCE3050I NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE3050I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability