NE3210S01-T1 PDF 데이터시트 검색

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GH- Gate Length: Lg ≤ 0.20 m Gate Width : Wg = 160