NE5510179A PDF 데이터시트 검색

PRELIMINARY DATA SHEET 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS FEATURES HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm HIGH LINEAR GAIN: 11 dB TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 5dBm HIGH POWER ADDED EFFICIENCY: 50% TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm SINGLE SUPPLY: 2.8 to 6.0 V SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX 4.2 Max OUTLINE DIMENSIONS (Units in mm) PACKAGE O