NGTB30N60L2WG PDF 데이터시트 검색

Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V http:, , onsemi.com Features IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) IGBT IC=100A (Tc=25°C) IGBT tf=80ns typ. Low switching loss in higher frequency applications Maximum junction temperature Tj=175°C Diode VF=1.7V typ. (IF=30A) Diode trr=70ns typ. 5μs short circuit capability Pb-free, Halogen-free and RoHS Compliance Electrical Connection C G N-channel E Applications