NJ42 PDF 데이터시트 검색

F-24 01, 99 NJ42 Process Silicon Junction Field-Effect Transistor General Purpose Amplifier High Breakdown Voltage Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C S D S Die Size = 0.032" X 0.032" All Bond Pads = 0.004", Dia. Substrate is also Gate. Devices in this Databook based on the NJ42 Process. Datasheet 2N6449, 2N6450 IFN6449, IFN6450 At 25°C free air temperature: Static Electrical