NT5CC1024M4BN PDF 데이터시트 검색

4Gb DDR3 SDRAM B-Die NT5CB1024M4BN , NT5CB512M8BN , NT5CB256M16BP NT5CC1024M4BN , NT5CC512M8BN , NT5CC256M16BP Feature VDD = VDDQ = 1.5V ± 0.075V (JEDEC Standard Power Supply) VDD = VDDQ = 1.35V -0.0675V, +0.1V (Backward Compatible to VDD = VDDQ = 1.5V ±0.075V) 8 Internal memory banks (BA0- BA2) Differential clock input (CK, ) Programmable Latency: 5, 6, 7, 8, 9, 10, 11 WRITE Latency (CWL): 5,6,7,8,9 POSTED CAS ADDITIVE Programmable Additive Latency (AL): 0, CL-1, CL-2 clock