NTD5862N PDF 데이터시트 검색

NTD5862N, NTP5862N N-Channel Power MOSFET 60 V, 98 A, 5.7 mW Features Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Continuous Gate to Source Voltage Non Repetitive (tp < 10 ms) Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) TC = 25°C Steady TC = 100°C State T