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상세설명 | 제조사 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch
NTE3303 Insulated Gate Bipolar Transistor N Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate Emitter Voltage, VGES . . . . . . . . . . . . . . . . .
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