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NTE3303 PDF 데이터시트 검색

 



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Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch

NTE3303 Insulated Gate Bipolar Transistor N Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate Emitter Voltage, VGES . . . . . . . . . . . . . . . . .
NTE
NTE

DataSheet.kr       |      2020      |     연락처      |     링크모음      |      신규     |      사이트맵 :    1,      2