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상세설명 | 제조사 |
SUPER HIGH-POWER GaAlAs IR EMITTERS
SUPER HIGH-POWER GaAlAs IR EMITTERS
FEATURES Ultra high power output Four wire bonds on die corners Very narrow optical beam Standard 3-lead TO-39 hermetic package Chip size .030 x .030 inches
OD-50L
ANODE (CASE) GLASS DOME .250 .262
.357 .362 .100
.018
.324 .332
.200 .031 .025 .071 .095 .500 CATHODE .040 45°
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Be
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