P0320AL PDF 데이터시트 검색

P0320AL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 1.1Ω @VGS = 10V ID 1A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 1 0.8 4 Avalanche Current IAS 2 Avalanche Energy L = 26.6mH EAS 53 Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 1.6 Operating Junction & Storage