P0403BT PDF 데이터시트 검색

P0403BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4mΩ @VGS = 10V ID 112A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 112 71 200 Avalanche Current IAS 44 Avalanche Energy L = 0.5mH EAS 486 Power Dissipation TC = 25 °C TC = 100 °C PD 83 33 Operating Junction & Storag