P1004B PDF 데이터시트 검색

P1004BS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 11mΩ @VGS = 10V ID 53A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 53 34 159 Avalanche Current IAS 40 Avalanche Energy L = 0.1mH EAS 82 Power Dissipation TC = 25 °C TC = 100 °C PD 63 25 Junction & Storage Temperatur