P4006BV PDF 데이터시트 검색

P4006BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 40mΩ @VGS = 10V ID 4.3A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 4.3 3.4 20 Avalanche Current IAS 18 Avalanche Energy L = 0.1mH EAS 16.2 Power Dissipation TA= 25 °C TA =70 °C PD 1.6 1 J