P5010AD PDF 데이터시트 검색

P5010AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 50mΩ @VGS = 10V ID 23A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 23 14 90 Avalanche Current IAS 38 Avalanche Energy L=0.1mH EAS 73 Power Dissipation TC = 25 °C TC = 100 °C PD 56 22