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상세설명 | 제조사 |
RF POWER transistor
PD54003-E PD54003S-E
RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs
General features
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Excellent thermal stability Common source configuration POUT = 3W with 12dB gain @ 500MH- New RF plastic package
PowerSO-10RF (formed lead)
Description
The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in c
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