PHT6NQ10T PDF 데이터시트 검색

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHT6NQ10T FEATURES ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 6.5 A g RDS(ON) ≤ 90 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications: Motor and relay drivers d.c. to d.c. converters The PHT6NQ10T is supplied in the SOT223