PM300CSE060 PDF 데이터시트 검색

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FLAT-BASE TYPE INSULATED PACKAGE MITSUBISHI MITSUBISHI MODULES> PM300CSE060 PM300CSE060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM300CSE060 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1 m fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. 3φ 300A, 600V Current-sense IGBT for 15kH- switching Monolithic gate drive & protec

Mitsubishi Electric Semiconductor