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상세설명 | 제조사 |
NPN Silicon Planar Epitaxial Transistor
PZT5551
NPN Silicon Planar Epitaxial Transistor
BASE 1 3 EMITTER COLLECTOR 2, 4
1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR
4
1
2
3
SOT-223
ABSOLUTE MAXIMUM RATINGS (TA=25˚C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 160 180 6 600 1.5 150 -55 to +150 Unit V V V mA W ˚C ˚C
Device Marking
PZT5551=5551
ELECTRICAL CHARACTERIS
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