RCR1540ESJ PDF 데이터시트 검색

® RCR15 P-Channel Enhancement Mode Field Effect Transistor - Features - Pin Configurations 40ESJ VDS (V) = -20V,ID = -4A RDS(ON)<55mΩ @ VGS= -4.5V RDS(ON)<63mΩ @ VGS= -2.5V RDS(ON)<83mΩ @ VGS= -1.8V SOT23-3L Package ESD Protected:3000V HBM z General Description The RCR1540ESJ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. z Packag