RD30HVF1 PDF 데이터시트 검색

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 DRAWING 22.0+, -0.3 18.0+, -0.3 7.2+, -0.5 7.6+, -0.3 4-C1 RoHS Compliance, DESCRIPTION RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. Silicon MOSFET Power Transistor,175MHz,30W OUTLINE High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MH- High Efficiency: 60%typ. 2 3 R1.6 14.0+, -0.4 6.6+, -0.3 FEATURES 1 APPLICATION For output s