RD70HVF1 PDF 데이터시트 검색

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD70HVF1 DRAWING 25.0+, -0.3 7.0+, -0.5 11.0+, -0.3 1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION RD70HVF1 is a MOS FET type transistor specifically designed for VHF, UHF High power amplifiers applications. OUTLINE 4-C2 FEATURES High power and High Gain: Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MH- Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MH- High Efficiency: 60%typ.on VHF Ba