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상세설명 | 제조사 |
10V Drive Nch MOS FET
RDX100N60
Transistors
10V Drive Nch MOS FET
RDX100N60
zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5 2.8
14.0
zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.
(1)Gate
15.0
12.0
8.0
2.5
1.3
1.2
0.8 2.54
(1) (2) (3)
2.54
0.75
2.6
zApplications Switching
zPackaging specifications
Package Type RDX100N60 Code Basic ordering unit (pieces) Bulk 500
(2)Drain (3)Source
zI
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