RFD16N02LSM PDF 데이터시트 검색

RFD16N02L, RFD16N02LSM May 1997 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET Description The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is a