RFL1N10L PDF 데이터시트 검색

RFL1N10L September 1998 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET Description This is an N-Channel enhancement mode silicon gate power eld effect transistor speci cally designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating