RFL1N18 PDF 데이터시트 검색

Semiconductor RFL1N18, RFL1N20 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power eld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09289. January 199