RJF0611JPD PDF 데이터시트 검색

Target Specifications Datasheet RJF0611JPD Silicon N Channel MOS FET Series Power Switching R07DS0581EJ0200 Rev.2.00 Apr 13, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features Logic level operation (