RJH1CV7DPK PDF 데이터시트 검색

Preliminary Datasheet RJH1CV7DPK 1200V - 35A - IGBT Application: Inverter Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25°C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 280 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 35 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0748EJ0200 Rev.2.00 Jun 12, 2012 Outline