RJH60D5DPM PDF 데이터시트 검색

Preliminary Datasheet RJH60D5DPM 600V - 37A - IGBT Application: Inverter Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 40 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 37 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0174EJ0200 Rev.2.00 Apr 19, 2012 Outline RENESAS